Date of Graduation

8-2016

Document Type

Thesis

Degree Name

Master of Science in Microelectronics-Photonics (MS)

Degree Level

Graduate

Department

Graduate School

Advisor

H. A. Mantooth

Committee Member

Gregory Salamo

Second Committee Member

Tom Vrotsos

Third Committee Member

Rick Wise

Keywords

Applied sciences, Modeling, Semiconductor device, Simulation

Abstract

The first-ever 1.7kV 8A SiC physics-based compact SPICE model is developed for behavior prediction, modeling and simulation of the GeneSiC “Super” Junction Transistor. The model implements Gummel-Poon based equations and adds a quasi-saturation collector series resistance representation from a 1.2 kV, 6 A SiC bipolar junction transistor model developed in Hangzhou, China. The model has been validated with the GA08JT17-247 device data representing both static and dynamic characteristics from GeneSiC. Parameter extraction was performed in IC-CAP and results include plots showing output characteristics, capacitance versus voltage (C-V), and switching characteristics for 25 °C, 125 °C, and 175 °C temperatures.

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