Date of Graduation

8-2016

Document Type

Thesis

Degree Name

Master of Science in Microelectronics-Photonics (MS)

Degree Level

Graduate

Department

Graduate School

Advisor

H. A. Mantooth

Committee Member

Gregory Salamo

Second Committee Member

Tom Vrotsos

Third Committee Member

Rick Wise

Abstract

The first-ever 1.7kV 8A SiC physics-based compact SPICE model is developed for behavior prediction, modeling and simulation of the GeneSiC “Super” Junction Transistor. The model implements Gummel-Poon based equations and adds a quasi-saturation collector series resistance representation from a 1.2 kV, 6 A SiC bipolar junction transistor model developed in Hangzhou, China. The model has been validated with the GA08JT17-247 device data representing both static and dynamic characteristics from GeneSiC. Parameter extraction was performed in IC-CAP and results include plots showing output characteristics, capacitance versus voltage (C-V), and switching characteristics for 25 °C, 125 °C, and 175 °C temperatures.

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