Date of Graduation
Master of Science in Electrical Engineering (MSEE)
Second Committee Member
This thesis demonstrates the process of creating a radiation hardened and extreme temperature operating comparator from start to finish in the 90 nm SiGe 9HP process node. This includes the entire design flow from examining comparator topologies, to designing the initial comparator circuits, to simulating the comparator over a temperature range of -196°C to 125°C, and finally the testing of the fabricated circuit. To verify the circuit would work at low temperatures, several new device models were created that could be used for simulations at -196°C. In addition to its properties as a standalone comparator, the circuit was also used as a building block in a SAR ADC that would be used for extreme environments.
Sissons, Benjamin Riley, "Silicon Germanium BiCMOS Comparator Designed for Use in An Extreme Environment Analog to Digital Converter" (2017). Theses and Dissertations. 1918.