Date of Graduation
Doctor of Philosophy in Engineering (PhD)
H. Alan Mantooth
Second Committee Member
Third Committee Member
Fourth Committee Member
Applied sciences; Gate turn off; Power electronics; Power semiconductor devices; Silicon carbide; Thyristors
Silicon carbide (SiC) power semiconductor devices have emerged in the past decade as the most promising technology for next generation power electronic applications ranging for electric vehicles to grid-connected power routing and conversion interfaces. Several devices have been developed, and even some have been released commercially, including diodes, MOSFETs, JFETs, thyristors, gate turn-off thyristors, and IGBTs. The model development, characterization and experimental validation of SiC p-type Gate Turn-off Thyristors (GTO) is presented in this work. The GTO device in this work is being used as part of a SiC-based solid-state fault current limiter under development at the University of Arkansas' National Center for Reliable Electric Power Transmission. The developed model is a level-3 physics-based model, that predicts on-state and switching behavior with high fidelity. The model also incorporates temperature effects of both a physical and empirical nature such that it will accurately predict device performances from 25 °C to +175 °C. Custom gate drivers and test configurations were designed to accurately characterize and test an 8 kV p-type SiC GTO provided by Cree. The measured data was used to validate the model's performance.
Saadeh, Osama Shihadeh, "Modeling and Characterization of P-Type Silicon Carbide Gate Turn off Thyristors" (2011). Theses and Dissertations. 241.