Document Type

Patent

Publication Date

9-26-2006

Abstract

The surface of a semiconductor material, e.g., gallium arsenide, is passivated by irradiating the surface with ultra-short laser pulses, until a stable passive surface is achieved. The passive surface so prepared is devoid of a superficial oxide layer.

Department

Electrical Engineering; Mechanical Engineering

Patent Number

US7112545

Application Filed

9-11-2000

Assignee

Board of Trustees of the University of Arkansas (Fayetteville, AR)

Comments

Tarak A. Railkar, Department of Mechanical Engineering, University of Arkansas, Fayetteville, AR
Ajay P. Malshe, Department of Mechanical Engineering, University of Arkansas, Fayetteville, AR
William D. Brown, Department of Electrical Engineering, University of Arkansas, Fayetteville, AR

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