The surface of a semiconductor material, e.g., gallium arsenide, is passivated by irradiating the surface with ultra-short laser pulses, until a stable passive surface is achieved. The passive surface so prepared is devoid of a superficial oxide layer.
Electrical Engineering; Mechanical Engineering
Board of Trustees of the University of Arkansas (Fayetteville, AR)
Railkar, Tarak A.; Malshe, Ajay P.; and Brown, William D., "Passivation of material using ultra-fast pulsed laser" (2006). Patents Granted. 115.