Document Type

Patent

Publication Date

9-26-2006

Abstract

The surface of a semiconductor material, e.g., gallium arsenide, is passivated by irradiating the surface with ultra-short laser pulses, until a stable passive surface is achieved. The passive surface so prepared is devoid of a superficial oxide layer.

Department

Electrical Engineering; Mechanical Engineering

Patent Number

US7112545

Application Filed

9-11-2000

Assignee

Board of Trustees of the University of Arkansas (Fayetteville, AR)

Comments

Tarak A. Railkar, Department of Mechanical Engineering; Ajay P. Malshe, Department of Mechanical Engineering; William D. Brown, Department of Electrical Engineering

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