A thin film layer of silicon nitride is deposited on silicon substrate by plasma enhanced chemical vapor deposition techniques is stabilized by post-deposition rapid thermal annealing at temperatures ranging from about 600° C to about 700° C and at times ranging from about 3 seconds to about 30 seconds is described.
The University of Arkansas (Little Rock, AR)
Brown, William D. and Khaliq, Muhammad A., "Silicon nitride for application as the gate dielectric in MOS devices" (1993). Patents Granted. 230.