Title

Doped semiconductor nanocrystals and methods of making same

Document Type

Patent

Publication Date

12-29-2010

Abstract

A method of synthesizing doped semiconductor nanocrystals. In one embodiment, the method includes the steps of combining a metal oxide or metal salt precursor, a ligand, and a solvent to form a metal complex in a reaction vessel; admixing an anionic precursor with the metal complex at a first temperature, T1, sufficient to form a plurality of host nanocrystals; doping a metal dopant onto the plurality of the host nanocrystals at a second temperature, T2, such that a layer of the metal dopant is formed substantially over the surface of a host nanocrystal that receives a metal dopant;; and adding a mixture having the anionic precursor and the metal oxide or metal salt precursor at a third temperature, T3, into the reaction vessel to allow regrowth of host nanocrystals on the surface of the layer of the metal dopant formed substantially over the surface of a host nanocrystal that receives a metal dopant to form a plurality of doped nanocrystals, wherein the doped nanocrystals show a characteristic of semiconductor.

Department

Chemistry and Biochemistry

Patent Number

GB2441666 (B)

Application Published

11-2-2006

Application Filed

4-25-2006

Assignee

UNIV ARKANSAS [US]

Comments

Narayan Pradhan, Department of Chemistry and Biochemistry

Xiaogang Peng, Department of Chemistry and Biochemistry

This document is currently not available here.

Share

COinS