Doped semiconductor nanocrystals and methods of making same

Document Type

Patent

Publication Date

12-29-2010

Abstract

A method of synthesizing doped semiconductor nanocrystals. In one embodiment, the method includes the steps of combining a metal oxide or metal salt precursor, a ligand, and a solvent to form a metal complex in a reaction vessel; admixing an anionic precursor with the metal complex at a first temperature, T1, sufficient to form a plurality of host nanocrystals; doping a metal dopant onto the plurality of the host nanocrystals at a second temperature, T2, such that a layer of the metal dopant is formed substantially over the surface of a host nanocrystal that receives a metal dopant;; and adding a mixture having the anionic precursor and the metal oxide or metal salt precursor at a third temperature, T3, into the reaction vessel to allow regrowth of host nanocrystals on the surface of the layer of the metal dopant formed substantially over the surface of a host nanocrystal that receives a metal dopant to form a plurality of doped nanocrystals, wherein the doped nanocrystals show a characteristic of semiconductor.

Department

Chemistry & Biochemistry

Patent Number

GB2441666 (B)

Application Published

11-2-2006

Application Filed

4-25-2006

Assignee

Board of Trustees of the University of Arkansas (Little Rock, AR)

Comments

Narayan Pradhan, Department of Chemistry and Biochemistry

Xiaogang Peng, Department of Chemistry and Biochemistry

This document is currently not available here.

Share

COinS