Document Type

Patent

Publication Date

7-21-2015

Abstract

A seed layer structure is annealed. It comprises a crystallization catalyst material on a seed semiconductor over a substrate. It contains an amorphous portion. Annealing of the seed layer structure converts the amorphous portion into a crystalline portion. The crystalline portion is connected to the substrate by subsurface crystal legs. The crystallization catalyst material formed underneath the crystalline portion by annealing is removed from the underneath of the crystalline portion.

Department

Electrical Engineering

Patent Number

US9087694

Application Number

US20130320342 A1

Application Published

12-5-2013

Application Filed

5-30-2013

Assignee

Silicon Solar Solutions, LLC (Fayetteville, AR) Board of Trustees of the University of Arkansas (Little Rock, AR)

Comments

Seth D. Shumate, Department of Electrical Engineering

Hameed A. Naseem, Department of Electrical Engineering

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