Document Type
Patent
Publication Date
9-6-2011
Abstract
Describes a method of synthesizing doped semiconductor nanocrystals. In one embodiment, the method includes the steps of combining a metal oxide or metal salt precursor, a ligand, and a solvent to form a metal complex in a reaction vessel; admixing an anionic precursor with the metal complex at a first temperature, T1, sufficient to form a plurality of host nanocrystals; doping a metal dopant onto the plurality of the host nanocrystals at a second temperature, T2, such that a layer of the metal dopant is formed substantially over the surface of a host nanocrystal that receives a metal dopant; and adding a mixture having the anionic precursor and the metal oxide or metal salt precursor at a third temperature, T3, into the reaction vessel to allow regrowth of host nanocrystals on the surface of the layer of the metal dopant formed substantially over the surface of a host nanocrystal that receives a metal dopant to form a plurality of doped nanocrystals, wherein the doped nanocrystals show a characteristic of semiconductor.
Department
Chemistry & Biochemistry
Patent Number
US8012377
Application Number
US20090302304
Application Published
12-10-2009
Application Filed
2-4-2009
Assignee
Board of Trustees of the University of Arkansas (Little Rock, AR)
Citation
Peng, X., & Pradhan, N. (2011). Doped semiconductor nanocrystals and methods of making same. Patents Granted. Retrieved from https://scholarworks.uark.edu/pat/64
Comments
Xiaogang Peng, Department of Chemistry and Biochemistry, University of Arkansas, Fayetteville, AR
Narayan Pradhan, Department of Chemistry and Biochemistry, University of Arkansas, Fayetteville, AR