Document Type

Patent

Publication Date

3-30-2010

Abstract

One aspect of the invention relates to a method for fabricating a polycrystalline silicon film. In one embodiment, it includes the steps of providing a substrate having a thermally-grown silicon dioxide layer, forming an amorphous silicon film on the thermally-grown silicon dioxide layer of the substrate, forming an aluminum layer on the amorphous silicon film to form a structure having the substrate, the amorphous silicon film and the aluminum layer, and annealing the structure at an annealing temperature for a period of time in an N2 environment with a ramp-up time to crystallize the amorphous silicon film to form a polycrystalline silicon film.

Department

Electrical Engineering; Mechanical Engineering

Patent Number

US7687334

Application Number

US20070224788

Application Published

9-27-2007

Application Filed

3-23-2007

Assignee

Board of Trustees of the University of Arkansas (Little Rock, AR)

Comments

Min Zou, Department of Mechanical Engineering; Li Cai, Department of Electrical Engineering; William D. Brown, Department of Electrical Engineering

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