Date of Graduation
5-2025
Document Type
Thesis
Degree Name
Bachelor of Science in Electrical Engineering
Degree Level
Undergraduate
Department
Electrical Engineering
Advisor/Mentor
Ware, Morgan E.
Abstract
The aim of this project is to use deep level transient spectroscopy (DLTS) to energetically evaluate defects by using the carrier concentration dependence on temperature and where these carriers may experience deviation from standard predictions. These defects become apparent through multiple C-V measurements that are swept through a temperature range. By analyzing trends with respect to temperature, the defects can be energetically “located,” and thus identified. This identification can help streamline semiconductor material manufacturing/growth because DLTS identifies potential defect causes by providing data to characterize semiconductor mid-band defects. DLTS can assess nearly all parameters associated with traps/defects including density, thermal cross section, energy level, and their spatial profile/effective density.
Keywords
Deep Level Transient Spectroscopy (DLTS); Silicon Carbide (SiC); Schottky Barrier Diode; Defect Characterization; Semiconductor Traps; Activation Energy
Citation
McCoy, Z. I. (2025). Defect Characterization of SiC Schottky Barrier Diode Using Deep Level Transient Spectroscopy. Electrical Engineering and Computer Science Undergraduate Honors Theses Retrieved from https://scholarworks.uark.edu/elcsuht/21
Included in
Electronic Devices and Semiconductor Manufacturing Commons, Semiconductor and Optical Materials Commons
