LTspice Modeling for GaN-GIT HEMT Including Cryogenic Temperature

Authors

Md Maksudul Hossain, University of Arkansas, FayettevilleFollow
Yuqi Wei, University of Arkansas, FayettevilleFollow
H. Alan Mantooth, University of Arkansas, FayettevilleFollow

Document Type

Article

Publication Date

2024

Keywords

LTspice Modeling; GaN-GIT HEMT

Abstract

Highly efficient electrically driven avionics have led to a renewed interest in cryogenic propulsion systems with the goal of reducing carbon emission footprint. Although cryogenic converters promise better efficiency and improved power density, the successful design is incumbent upon the appropriate switching device selection and simulation-based analyses prior to initial prototyping. In this work, a datasheet-driven compact model for a gallium nitride (GaN) Gate Injection Transistor (GIT) has been proposed and implemented in LTspice, a versatile, high performance, and free circuit simulator in order to investigate the merit of the chosen device in a power electronic system.

Citation

Hossain, M., Wei, Y., & Mantooth, H. A. (2024). LTspice Modeling for GaN-GIT HEMT Including Cryogenic Temperature. IOP Conference Series: Materials Science and Engineering, 1302, 012029. https://doi.org/10.1088/1757-899X/1302/1/012029

Creative Commons License

This work is licensed under a Creative Commons Attribution 4.0 International License.