Date of Graduation


Document Type


Degree Name

Doctor of Philosophy in Engineering (PhD)

Degree Level



Electrical Engineering


Homer A. Mantooth

Committee Member

Randy L. Brown

Second Committee Member

Juan C. Balda

Third Committee Member

Scott Smith

Fourth Committee Member

Jia Di


Applied sciences, High temperature electronics, Ic design, Silicon carbide, Voltage regulators, Wide bandgap semiconductors


Current market demands have pushed the capabilities of silicon to the edge. High temperature and high power applications require a semiconductor device to operate reliably in very harsh environments. This situation has awakened interests in other types of semiconductors, usually with a higher bandgap than silicon's, as the next venue for the fabrication of integrated circuits (IC) and power devices. Silicon Carbide (SiC) has so far proven to be one of the best options in the power devices field.

This dissertation presents the first attempt to fabricate a SiC linear voltage regulator. This circuit would provide a power management option for developing SiC processes due to its relatively simple implementation and yet, a performance acceptable to today's systems applications. This document details the challenges faced and methods needed to design and fabricate the circuit as well as measured data corroborating design simulation results.