A low temperature process for forming a metal doped silicon layer in which a silicon layer is deposited onto a substrate at low temperatures, with a metal doping layer then deposited upon the silicon layer is described. This structure is then annealed at low temperatures to form a metal doped semiconductor having greater than about 1x10^20 dopant atoms per cubic cm of silicon.
Board of Trustees of the University of Arkansas (Little Rock, AR)
Naseem, H. A., Haque, M. S., & Brown, W. D. (2005). Method of doping silicon, metal doped silicon, method of making solar cells, and solar cells. Patents Granted. Retrieved from https://scholarworks.uark.edu/pat/133