A method for modeling the performance of a laterally diffused metal oxide semiconductor (LDMOS) device across a wide temperature range is disclosed. The method comprises the steps of positioning the device in an environment chamber operable to create a plurality of environment temperatures; connecting the pins of the device to a measurement system operable to measure at least one device characteristic; operating the environment chamber to set a series of four environment temperatures, acquiring a value of the device characteristic from the measurement system at each temperature, and extracting a temperature parameter set based on the value of the device characteristic at each temperature, then generating a temperature-scaling model for the device.
Board of Trustees of the University of Arkansas (Little Rock, AR)
Kashyap, A. S., & Mantooth, H. A. (2013). Method for modeling and parameter extraction of LDMOS devices. Patents Granted. Retrieved from https://scholarworks.uark.edu/pat/29