A method for modeling the performance of a laterally diffused metal oxide semiconductor (LDMOS) device across a wide temperature range is disclosed. The method comprises the steps of positioning the device in an environment chamber operable to create a plurality of environment temperatures; connecting the pins of the device to a measurement system operable to measure at least one device characteristic; operating the environment chamber to set a series of four environment temperatures, acquiring a value of the device characteristic from the measurement system at each temperature, and extracting a temperature parameter set based on the value of the device characteristic at each temperature, then generating a temperature-scaling model for the device.
Board of Trustees of the University of Arkansas (Little Rock, AR)
Kashyap, Avinash S. and Mantooth, H. Alan, "Method for modeling and parameter extraction of LDMOS devices" (2013). Patents Granted. 29.