A seed layer structure is annealed. It comprises a crystallization catalyst material on a seed semiconductor over a substrate. It contains an amorphous portion. Annealing of the seed layer structure converts the amorphous portion into a crystalline portion. The crystalline portion is connected to the substrate by subsurface crystal legs. The crystallization catalyst material formed underneath the crystalline portion by annealing is removed from the underneath of the crystalline portion.
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Hutchings, D. A., Shumate, S. D., & Naseem, H. A. (2015). Ultra-large grain polycrystalline semiconductors through top-down aluminum induced crystallization (TAIC). Patents Granted. Retrieved from https://scholarworks.uark.edu/pat/5