Document Type
Article
Publication Date
8-2024
Keywords
single-step growth approach; room temperature PL; twinning
Abstract
We report on the growth of high-quality GaAs semiconductor materials on an AlAs/sapphire substrate by molecular beam epitaxy. The growth of GaAs on sapphire centers on a new single-step growth technique that produces higher-quality material than a previously reported multi-step growth method. Omega-2theta scans confirmed the GaAs (111) orientation. Samples grown at 700 °C displayed the highest crystal quality with minimal defects and strain, evidenced by narrow FWHM values of the rocking curve. By varying the As/Ga flux ratio and the growth temperature, we significantly improved the quality of the GaAs layer on sapphire, as compared to that obtained in multi-step studies. Photoluminescence measurements at room temperature and 77 K further support these findings. This study underscores the critical role of the As/Ga flux ratio and growth temperature in optimizing GaAs epitaxial growth on sapphire.
Citation
Wangila, E., Gunder, C., Zamani-Alavijeh, M., de Oliveira, F. M., Kryvyi, S., Sheibani, A., Mazur, Y. I., Yu, S., & Salamo, G. J. (2024). High-Quality Single-Step Growth of GaAs on C-Plane Sapphire by Molecular Beam. Crystals, 14 (8), 724. https://doi.org/10.3390/cryst14080724
Creative Commons License
This work is licensed under a Creative Commons Attribution 4.0 International License.
