The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire

Authors

Emmanuel Wangila, University of Arkansas, FayettevilleFollow
Calbi Gunder, University of Arkansas, FayettevilleFollow
Petro M. Lytvyn, NAS of UkraineFollow
Mohammad Zamani-Alavijeh, University of Arkansas, FayettevilleFollow
Fernando Maia de Oliveira, University of Arkansas, FayettevilleFollow
Serhii Kryvyi, University of Arkansas, FayettevilleFollow
Hryhorii Stanchu, University of Arkansas, FayettevilleFollow
Aida Sheibani, University of Arkansas, FayettevilleFollow
Yuriy I. Mazur, University of Arkansas, FayettevilleFollow
Shui-Qing Yu, University of Arkansas, FayettevilleFollow
Gregory J. Salamo, University of Arkansas, FayettevilleFollow

Document Type

Article

Publication Date

5-2024

Keywords

partially relaxed GeSn; surface relief; vibrational modes; grading profile

Abstract

Ge_1−xSn_x growth on a new sapphire platform has been demonstrated. This involved the growth of GeSn on Ge/GaAs layers using the algorithm developed. The resultant growths of Ge on GaAs/AlAs/sapphire and Ge_1−xSn_x on Ge/GaAs/AlAs/sapphire were investigated by in situ and ex situ characterization techniques to ascertain the surface morphology, crystal structure, and quality. The growth mode of Ge on GaAs was predominantly two-dimensional (2D), which signifies a layer-by-layer deposition, contributing to enhanced crystal quality in the Ge/GaAs system. The growth of Ge_1−xSn_x with 10% Sn on a graded profile for 30 min shows uniform composition and a strong peak on the reciprocal space map (RSM). On the other hand, the partially relaxed growth of the alloy on RSM was established.

Citation

Wangila, E., Gunder, C., Lytvyn, P. M., Zamani-Alavijeh, M., de Oliveira, F. M., Kryvyi, S., Stanchu, H., Sheibani, A., Mazur, Y. I., Yu, S., & Salamo, G. J. (2024). The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire. Crystals, 14 (5), 414. https://doi.org/10.3390/cryst14050414

Creative Commons License

This work is licensed under a Creative Commons Attribution 4.0 International License.