Document Type
Article
Publication Date
5-2024
Keywords
partially relaxed GeSn; surface relief; vibrational modes; grading profile
Abstract
Ge1−xSnx growth on a new sapphire platform has been demonstrated. This involved the growth of GeSn on Ge/GaAs layers using the algorithm developed. The resultant growths of Ge on GaAs/AlAs/sapphire and Ge1−xSnx on Ge/GaAs/AlAs/sapphire were investigated by in situ and ex situ characterization techniques to ascertain the surface morphology, crystal structure, and quality. The growth mode of Ge on GaAs was predominantly two-dimensional (2D), which signifies a layer-by-layer deposition, contributing to enhanced crystal quality in the Ge/GaAs system. The growth of Ge1−xSnx with 10% Sn on a graded profile for 30 min shows uniform composition and a strong peak on the reciprocal space map (RSM). On the other hand, the partially relaxed growth of the alloy on RSM was established.
Citation
Wangila, E., Gunder, C., Lytvyn, P. M., Zamani-Alavijeh, M., de Oliveira, F. M., Kryvyi, S., Stanchu, H., Sheibani, A., Mazur, Y. I., Yu, S., & Salamo, G. J. (2024). The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire. Crystals, 14 (5), 414. https://doi.org/10.3390/cryst14050414
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