Abstract
A software program for on-state parameter extraction is presented for the realization of a high quality model for SiC Schottky, Merged PiN Schottky, and PiN Power diodes based on McNutt and Mantooth's Comprehensive SiC Diode model [ 1 ].
Recommended Citation
Cilio, E. (2004). Parameter Extraction Software for Silicon Carbide Schottky, Merged Pin Schottky and Pin Power Diode Models. Inquiry: The University of Arkansas Undergraduate Research Journal, 5(1). Retrieved from https://scholarworks.uark.edu/inquiry/vol5/iss1/13
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