Multichip modules (MCM)have proved to be a viable packaging technology for achieving small size and high performance. By their nature, MCMs typically integrate multiple bare die into a module that can be the plastic or ceramic package. As a result, the MCMrequires an efficient mechanism for removing excess heat. Diamond with its excellent thermal conductivity, is the ideal choice as a substrate material for these applications. Chemical vapor deposited (CVD) diamond substrates makes possible the practical realization of a novel diamond based 3-D MCM. However, the diamond films grown by CVD technique are polycrystalline and have non-uniform filmroughness and randomly faceted crystals. These non-planar surfaces reduce the diamond's thermal management efficiency. Therefore, itbecomes imperative that the asdeposited diamond films be polished for use inMCMs. Chemical assisted mechanical polishing (CAMP) technique has been developed at HiDEC,University of Arkansas. In this technique diamond is lapped against an alumina plate under a load in the presence of certain chemicals. Although CAMP technique reduces the lapping time considerably, stillnewer techniques must be developed to reduce polishing cost further. We are currently using reactive ion etching (RIE) to substantially reduce the polishing time. Preliminary studies using reactive ion etching showed etch rates of 500 - lOOOA/min at low pressures. These etched films showed a considerably higher polishing rate (using CAMP technique) than the nonetched films. Changes in the morphology and structure of the diamond films due to etching and polishing were characterized by scanning electron microscopy (SEM), Dektak profilometer and Raman spectroscopy. This paper presents a systematic study ofRIEand CAMP of CVD-diamond substrates.
Sirineni, Gopi M.R.; Naseem, Hameed A.; Brown, W. D.; and Malshe, A. P.
"Polishing of CVD-Diamond Substrates Using Reactive Ion Etching,"
Journal of the Arkansas Academy of Science: Vol. 49, Article 37.
Available at: https://scholarworks.uark.edu/jaas/vol49/iss1/37