Novel High Frequency Silicon Carbide Static Induction Transistor-Based Test-Bed for the Acquisition of SiC Power Device Reverse Recovery Characteristics

Authors

Kevin M. Speer, University of Arkansas, Fayetteville
Ty R. McNutt, University of Arkansas, Fayetteville
Alexander B. Lostetter, University of Arkansas, Fayetteville
H. Alan Mantooth, University of Arkansas, Fayetteville
Kraig J. Olejniczak, Valparaiso University

Abstract

A test system is presented that utilizes a high-frequency Silicon Carbide (SiC) Static Induction Transistor (SIT) in place of the traditional MOSFET to test reverse recovery characteristics for the new class of SiC power diodes. An easily implementable drive circuit is presented that can drive the high-frequency SIT. The SiC SIT is also compared to a commonly used Si MOSFET in the test circuit application.

Recommended Citation

Speer, Kevin M.; McNutt, Ty R.; Lostetter, Alexander B.; Mantooth, H. Alan; and Olejniczak, Kraig J. (2003) "Novel High Frequency Silicon Carbide Static Induction Transistor-Based Test-Bed for the Acquisition of SiC Power Device Reverse Recovery Characteristics," Journal of the Arkansas Academy of Science: Vol. 57, Article 23.
Available at: https://scholarworks.uark.edu/jaas/vol57/iss1/23