Document Type

Patent

Publication Date

4-10-2007

Abstract

An oxide or nitride layer on an amorphous semiconductor layer prior to performing metal-induced crystallization of the semiconductor layer is described. The oxide or nitride layer facilitates conversion of the amorphous material into large grain polycrystalline material. Hence, a native silicon dioxide layer provided on hydrogenated amorphous silicon (a-Si:H), followed by deposited Al permits induced crystallization at temperatures far below the solid phase crystallization temperature of amorphous silicon solar cells and thin film transistors can be prepared using this method.

Department

Electrical Engineering

Patent Number

US7202143

Application Filed

10-25-2004

Assignee

Board of Trustees of the University of Arkansas (Little Rock, AR)

Comments

Hameed A. Naseem, Department of Electrical Engineering; Marwan Albarghouti, Department of Electrical Engineering

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