Describes a method of synthesizing doped semiconductor nanocrystals. In one embodiment, the method includes the steps of combining a metal oxide or metal salt precursor, a ligand, and a solvent to form a metal complex in a reaction vessel; admixing an anionic precursor with the metal complex at a first temperature, T1, sufficient to form a plurality of host nanocrystals; doping a metal dopant onto the plurality of the host nanocrystals at a second temperature, T2, such that a layer of the metal dopant is formed substantially over the surface of a host nanocrystal that receives a metal dopant; and adding a mixture having the anionic precursor and the metal oxide or metal salt precursor at a third temperature, T3, into the reaction vessel to allow regrowth of host nanocrystals on the surface of the layer of the metal dopant formed substantially over the surface of a host nanocrystal that receives a metal dopant to form a plurality of doped nanocrystals, wherein the doped nanocrystals show a characteristic of semiconductor.
Chemistry and Biochemistry
US7632428; CA2609650 (C); GB2441666 (B)
Board of Trustees of the University of Arkansas (Little Rock, AR)
Peng, Xiaogang and Pradhan, Narayan, "Doped semiconductor nanocrystals and methods of making same" (2009). Patents Granted. 85.