Date of Graduation
Master of Science in Electrical Engineering (MSEE)
Mantooth, H. Alan
Second Committee Member
semiconductors, circuits, transistors, photolithography, etching, metal deposition, annealing
Silicon Carbide (SiC) is a rather new material that possesses unparalleled properties when compared to Silicon. Due to its larger band gap alongside other thermal properties, SiC can survive in hotter, more radiation intensive environments, whether that be within the crust of the earth or in the reaches of space. As a desirable semiconductor for these applications, CMOS is an especially important device due to its low power consumption. However, creating a good contact between the metal and semiconductor optimally requires two different metals for the n -type and the p-type semiconductor. This greatly increases the processing time, as separate masks must be produced to allow for each metal to go to the n doped or p doped part of the semiconductor. This thesis explores the use of one metal stack for both n-type and t-type semiconductors. A discussion on the differences between Silicon and SiC will be introduced, as well as the benefits of wide bandgap semiconductors. Additionally, explanations as to why most metals are incompatible with the simultaneous formation of ohmic contacts for n-type and p-type will be discussed. Electrical and material characterizations used in the thesis will also be defined and how they are used. After the separate fabrications for CTLM and TLM will be explained in depth, along with the equipment used in the fabrication process. After, samples that were used in this study will be defined, and the electrical and material characterization of each set of samples will be explained. Finally, discussion of results between the different metals on n-type and p-type will be discussed, as well as future works.
Rice, T. (2023). Characterization of Highly Doped n-type and p-type Silicon Carbide Ohmic Contacts. Graduate Theses and Dissertations Retrieved from https://scholarworks.uark.edu/etd/5142