An oxide or nitride layer on an amorphous semiconductor layer prior to performing metal-induced crystallization of the semiconductor layer is described. The oxide or nitride layer facilitates conversion of the amorphous material into large grain polycrystalline material. Hence, a native silicon dioxide layer provided on hydrogenated amorphous silicon (a-Si:H), followed by deposited Al permits induced crystallization at temperatures far below the solid phase crystallization temperature of amorphous silicon solar cells and thin film transistors can be prepared using this method.
Board of Trustees of the University of Arkansas (Little Rock, AR)
Naseem, H. A., & Albarghouti, M. (2007). Low temperature production of large-grain polycrystalline semiconductors. Patents Granted. Retrieved from https://scholarworks.uark.edu/pat/105
STATEMENT OF GOVERNMENT SUPPORT Development of this invention was supported at least in part by the U.S. Department of Energy through DOE/EPSCOR grant 0402-03027-21-0000. The Government may have certain rights in the invention.
Hameed A. Naseem, Department of Electrical Engineering, University of Arkansas, Fayetteville, AR
Marwan Albarghouti, Department of Electrical Engineering, University of Arkansas, Fayetteville, AR