The surface of a semiconductor material, e.g., gallium arsenide, is passivated by irradiating the surface with ultra-short laser pulses, until a stable passive surface is achieved. The passive surface so prepared is devoid of a superficial oxide layer.
Electrical Engineering; Mechanical Engineering
Board of Trustees of the University of Arkansas (Fayetteville, AR)
Railkar, T. A., Malshe, A. P., & Brown, W. D. (2006). Passivation of material using ultra-fast pulsed laser. Patents Granted. Retrieved from https://scholarworks.uark.edu/pat/115