A low temperature process for forming a metal doped silicon layer in which a silicon layer is deposited onto a substrate at low temperatures, with a metal doping layer then deposited upon the silicon layer is described. This structure is then annealed at low temperatures to form a metal doped semiconductor having greater than about 1x10^20 dopant atoms per cm3 of silicon.
Board of Trustees of the University of Arkansas (Little Rock, AR)
Naseem, H. A., Haque, M. S., & Brown, W. D. (2003). Method of doping silicon, metal doped silicon, method of making solar cells, and solar cells. Patents Granted. Retrieved from https://scholarworks.uark.edu/pat/144
RIGHTS OF THE GOVERNMENT This invention was made with U. S. Government support.
Hameed A. Naseem, Department of Electrical Engineering, University of Arkansas, Fayetteville, AR
M. Shahidul Haque, Department of Electrical Engineering, University of Arkansas, Fayetteville, AR
William D. Brown, Department of Electrical Engineering, University of Arkansas, Fayetteville, AR