Date of Graduation
Master of Science in Microelectronics-Photonics (MS)
Hameed A. Naseem
Shui-Qing (Fisher) Yu
Second Committee Member
Third Committee Member
A new material of highly-phosphorus doped silicon for device applications was characterized and analyzed for new material properties. Devices such as NMOS transistors and other CMOS compatible devices may benefit from new materials that reduce external resistances and increase drive currents.
Material characterization requires numerous techniques and technologies to determine electrical, optical, and physical characteristics. For this work, Hall measurement, X-ray Diffraction, Raman Spectroscopy, Photoluminescence Characterization, and Spectroscopic Ellipsometry were used to better understand this new material. The results may lead to new models for silicon phosphorus alloys.
Cousar, Larry C., "Characterization of Silicon Phosphorus Alloy for Device Applications" (2015). Theses and Dissertations. 1138.