Date of Graduation
5-2015
Document Type
Thesis
Degree Name
Master of Science in Microelectronics-Photonics (MS)
Degree Level
Graduate
Department
Microelectronics-Photonics
Advisor/Mentor
Naseem, Hameed A.
Committee Member
Yu, Shui-Qing "Fisher"
Second Committee Member
Salamo, Gregory J.
Third Committee Member
Wise, Rick L.
Keywords
Applied sciences; Epitaxial silicon; Phosphorus doped silicon; Semiconductor characterization; Silicon phosphorus
Abstract
A new material of highly-phosphorus doped silicon for device applications was characterized and analyzed for new material properties. Devices such as NMOS transistors and other CMOS compatible devices may benefit from new materials that reduce external resistances and increase drive currents.
Material characterization requires numerous techniques and technologies to determine electrical, optical, and physical characteristics. For this work, Hall measurement, X-ray Diffraction, Raman Spectroscopy, Photoluminescence Characterization, and Spectroscopic Ellipsometry were used to better understand this new material. The results may lead to new models for silicon phosphorus alloys.
Citation
Cousar, L. C. (2015). Characterization of Silicon Phosphorus Alloy for Device Applications. Graduate Theses and Dissertations Retrieved from https://scholarworks.uark.edu/etd/1138
Included in
Electromagnetics and Photonics Commons, Electronic Devices and Semiconductor Manufacturing Commons, Structural Materials Commons
