Document Type

Patent

Publication Date

10-9-1990

Abstract

Describes a process by which thin films of silicon nitride are deposited on silicon substrates by plasma enhanced chemical vapor deposition techniques, stabilized by post-deposition rapid thermal annealing at temperatures ranging from about 600° C to about 700° C and at times ranging from about 3 seconds to about 30 seconds.

Department

Electrical Engineering

Patent Number

US4962065

Application Filed

2-9-1990

Assignee

The University of Arkansas (Little Rock, AR)

Comments

William D. Brown, Department of Electrical Engineering

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