Annealing process to stabilize PECVD silicon nitride for application as the gate dielectric in MOS devices

Inventors

William D. Brown, University of Arkansas, FayettevilleFollow
Muhammad A. KhaliqFollow

Document Type

Patent

Publication Date

10-9-1990

Abstract

Describes a process by which thin films of silicon nitride are deposited on silicon substrates by plasma enhanced chemical vapor deposition techniques, stabilized by post-deposition rapid thermal annealing at temperatures ranging from about 600° C to about 700° C and at times ranging from about 3 seconds to about 30 seconds.

Department

Electrical Engineering

Patent Number

US4962065

Application Filed

2-9-1990

Assignee

University of Arkansas (Little Rock, AR)

Comments

William D. Brown, Department of Electrical Engineering, University of Arkansas, Fayetteville, AR

Citation

Brown, W. D., & Khaliq, M. A. (1990). Annealing process to stabilize PECVD silicon nitride for application as the gate dielectric in MOS devices. Patents Granted. Retrieved from https://scholarworks.uark.edu/pat/257