Describes a process by which thin films of silicon nitride are deposited on silicon substrates by plasma enhanced chemical vapor deposition techniques, stabilized by post-deposition rapid thermal annealing at temperatures ranging from about 600° C to about 700° C and at times ranging from about 3 seconds to about 30 seconds.
University of Arkansas (Little Rock, AR)
Brown, W. D., & Khaliq, M. A. (1990). Annealing process to stabilize PECVD silicon nitride for application as the gate dielectric in MOS devices. Patents Granted. Retrieved from https://scholarworks.uark.edu/pat/257