Describes a process by which thin films of silicon nitride are deposited on silicon substrates by plasma enhanced chemical vapor deposition techniques, stabilized by post-deposition rapid thermal annealing at temperatures ranging from about 600° C to about 700° C and at times ranging from about 3 seconds to about 30 seconds.
The University of Arkansas (Little Rock, AR)
Brown, William D. and Khaliq, Muhammad A., "Annealing process to stabilize PECVD silicon nitride for application as the gate dielectric in MOS devices" (1990). Patents Granted. 257.