Excitation intensity and thickness dependent emission mechanism from an ultrathin InAs layer in GaAs matrix
Epitaxy, photoluminescence spectroscopy, heterostructures, emission spectroscopy, semiconductors, excitons, correlated electrons, x-ray diffraction
A set of samples containing a single ultrathin InAs layer with varying thickness from 0.5 to 1.4ML in a GaAs matrix have been grown by molecular beam epitaxy on GaAs (001) substrates at low temperatures and investigated by low-temperature photoluminescence (PL). A linear change in emission energy with InAs thickness has been experimentally observed. The PL emission line shape from InAs/GaAs heterostructures has been investigated as a function of incident optical intensity. The interplay between uncorrelated electron-hole pairs, free excitons, and localized excitons, as a function of the excitation intensity, is found to play a significant role on the optical properties of the InAs layer and is described in detail.
Kumar, Rahul; Maidaniuk, Yurii; Kuckuk, Andrian; Saha, Samir K.; Ghosh, Pijush K.; Mazur, Yuriy I.; Ware, Morgan E.; and Salamo, Gregory J., "Excitation intensity and thickness dependent emission mechanism from an ultrathin InAs layer in GaAs matrix" (2018). Physics Faculty Publications and Presentations. 2.