Excitation intensity and thickness dependent emission mechanism from an ultrathin InAs layer in GaAs matrix
Epitaxy, photoluminescence spectroscopy, heterostructures, emission spectroscopy, semiconductors, excitons, correlated electrons, x-ray diffraction
A set of samples containing a single ultrathin InAs layer with varying thickness from 0.5 to 1.4ML in a GaAs matrix have been grown by molecular beam epitaxy on GaAs (001) substrates at low temperatures and investigated by low-temperature photoluminescence (PL). A linear change in emission energy with InAs thickness has been experimentally observed. The PL emission line shape from InAs/GaAs heterostructures has been investigated as a function of incident optical intensity. The interplay between uncorrelated electron-hole pairs, free excitons, and localized excitons, as a function of the excitation intensity, is found to play a significant role on the optical properties of the InAs layer and is described in detail.
Kumar, R., Maidaniuk, Y., Kuckuk, A., Saha, S. K., Ghosh, P. K., Mazur, Y. I., Ware, M. E., & Salamo, G. J. (2018). Excitation intensity and thickness dependent emission mechanism from an ultrathin InAs layer in GaAs matrix. Physics Faculty Publications and Presentations. Retrieved from https://scholarworks.uark.edu/physpub/2