Characterization of Silicon Phosphorus Alloy for Device Applications

Author

Larry C. Cousar, University of Arkansas, FayettevilleFollow

Date of Graduation

5-2015

Document Type

Thesis

Degree Name

Master of Science in Microelectronics-Photonics (MS)

Degree Level

Graduate

Department

Microelectronics-Photonics

Advisor/Mentor

Hameed A. Naseem

Committee Member

Shui-Qing (Fisher) Yu

Second Committee Member

Gregory Salamo

Third Committee Member

Rick Wise

Keywords

Applied sciences, Epitaxial silicon, Phosphorus doped silicon, Semiconductor characterization, Silicon phosphorus

Abstract

A new material of highly-phosphorus doped silicon for device applications was characterized and analyzed for new material properties. Devices such as NMOS transistors and other CMOS compatible devices may benefit from new materials that reduce external resistances and increase drive currents.

Material characterization requires numerous techniques and technologies to determine electrical, optical, and physical characteristics. For this work, Hall measurement, X-ray Diffraction, Raman Spectroscopy, Photoluminescence Characterization, and Spectroscopic Ellipsometry were used to better understand this new material. The results may lead to new models for silicon phosphorus alloys.

Citation

Cousar, L. C. (2015). Characterization of Silicon Phosphorus Alloy for Device Applications. Graduate Theses and Dissertations Retrieved from https://scholarworks.uark.edu/etd/1138