Date of Graduation

5-2026

Document Type

Thesis

Degree Name

Bachelor of Science in Chemistry

Degree Level

Undergraduate

Department

Chemistry & Biochemistry

Advisor/Mentor

Coridan, Robert

Committee Member

Sakon, Josh

Second Committee Member

Miller, Logan

Third Committee Member

Pope, Adam

Abstract

Vanadium Dioxide (VO2) thin films have been grown on silicon wafers using atomic layer deposition of TDMAV (tetrakis(dimethylamino)vanadium(IV)) and H2O as precursors. A quartz crystal microbalance (QCM) measurement was used during deposition to confirm growth and resulted in a growth rate of approximately 0.6 Angstroms/cycle. X-Ray Reflectivity (XRR) was performed to confirm growth thickness and reported an approximately 30 nm thin film after 500 cycles of TDMAV precursor deposition. X-Ray photoelectron spectroscopy was utilized to determine the phase of the vanadium samples and confirmed the presence of vanadium dioxide as prepared and after annealing under nitrogen gas. Annealing under oxygen preferentially shifted the equilibrium toward more highly oxygenated compounds. The metal-insulator phase transition for vanadium dioxide is characterized using spectral analysis in the ultraviolet-visible light region of the electromagnetic spectrum. Vanadium dioxide undergoes a transition from a monoclinic semiconductor (insulator) to a rutile conductor at 681°C and is the focus of this study. The end goal of the project is to couple the vanadium dioxide MIT to the photonic nanostructure of Coridan Lab omission glasses to produce tunable structural color.

Keywords

Vanadium dioxide; thin films; metal-insulator transition

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