Date of Graduation

5-2020

Document Type

Thesis

Degree Name

Bachelor of Science in Electrical Engineering

Degree Level

Undergraduate

Department

Electrical Engineering

Advisor/Mentor

Chen, Zhong

Abstract

The paper explores possible metallization schemes to form simultaneous ohmic contacts to n-type and p-type silicon carbide contacts. Silicon carbide has shown promise in revolutionizing the power electronics market due to its increased switching speed, compact design, and higher temperature tolerance when compared to Silicon, the market standard. With the continuing development of silicon carbide technology, higher efficiency in future electric vehicles can be achieved by employing this new technology. This paper discusses theoretical contact formation between metals and semiconductors along with a proposed experiment to create a Ni/Al metallization scheme on both n and p-type contacts simultaneously on a silicon carbide wafer. The original purposed experiment was not able to be carried due to the outbreak of COVID-19. However, the contact formation process and testing procedure are discussed in order to carry out the experiment.

Keywords

Silicon Carbide, Ohmic Contacts, SiC

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