Date of Graduation

5-2020

Document Type

Thesis

Degree Name

Bachelor of Science in Electrical Engineering

Degree Level

Undergraduate

Department

Electrical Engineering

Advisor/Mentor

Chen, Zhong

Abstract

This paper analyzes metallization stacks in both n-type and p-type used in Silicon Carbide to create Ohmic Contacts. Silicon Carbide has shown its significance in usage as a semiconductor in high temperatures, and other extreme environments compared to its silicon counterpart. Additionally, silicon carbide exhibits many other favorable attributes such as strong radiation hardness, high power capability, and high-temperature tolerance. These attributes translate into great components for use in aviation and other future transportations by increasing reliability in a sector that already requires high reliability. Applications of this material could prove useful in fields such as aviation, among others. This paper highlights the objectives of metallization, preliminary research, the experimental plan on how to implement and characterize different metal stacks, future research, as well as the significance of proposed research in this up and coming technology. However, due to the unforeseen circumstances of COVID-19, the experimental plan concerning the metallization process and characterization of the metallization was not able to be carried out. Due to this, a layout of how the metallization process and how the results from said process can be extracted and read will be discussed.

Keywords

Ohmic Contacts, Metallization, Silicon Carbide

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