Date of Graduation
8-2016
Document Type
Thesis
Degree Name
Master of Science in Microelectronics-Photonics (MS)
Degree Level
Graduate
Department
Microelectronics-Photonics
Advisor/Mentor
Mantooth, H. Alan
Committee Member
Vrotsos, Tom A.
Second Committee Member
Francis, A. Matthew
Third Committee Member
Salamo, Gregory J.
Fourth Committee Member
Wise, Rick L.
Keywords
Applied sciences; Compact modeling; IGBT; Insulated gate bipolar transistors; SiC; Silicon carbide
Abstract
This thesis presents a unified (n-channel and p-channel) silicon/silicon carbide Insulated Gate Bipolar Transistor (IGBT) compact model in both MAST and Verilog-A formats. Initially, the existing MAST model mobility equations were updated using recently referenced silicon carbide (SiC) data. The updated MAST model was then verified for each device tested. Specifically, the updated MAST model was verified for the following IGBT devices and operation temperatures: n-channel silicon at 25 ˚C and at 125 ˚C; n-channel SiC at 25 ˚C and at 175 ˚C; and p-channel SiC at 150 ˚C and at 250 ˚C. Verification was performed through capacitance, DC output characteristics, and turn-off transient simulations. The validated MAST model was then translated into the Verilog-A language, and the Verilog-A model results were validated against the updated MAST model.
Citation
Perez, S. (2016). Compact Modeling of SiC Insulated Gate Bipolar Transistors. Graduate Theses and Dissertations Retrieved from https://scholarworks.uark.edu/etd/1708
Included in
Electronic Devices and Semiconductor Manufacturing Commons, VLSI and Circuits, Embedded and Hardware Systems Commons
