Date of Graduation
8-2016
Document Type
Thesis
Degree Name
Master of Science in Microelectronics-Photonics (MS)
Degree Level
Graduate
Department
Microelectronics-Photonics
Advisor/Mentor
Mantooth, H. Alan
Committee Member
Salamo, Gregory J.
Second Committee Member
Vrotsos, Tom A.
Third Committee Member
Wise, Rick L.
Keywords
Applied sciences; Modeling; Semiconductor device; Simulation
Abstract
The first-ever 1.7kV 8A SiC physics-based compact SPICE model is developed for behavior prediction, modeling and simulation of the GeneSiC “Super” Junction Transistor. The model implements Gummel-Poon based equations and adds a quasi-saturation collector series resistance representation from a 1.2 kV, 6 A SiC bipolar junction transistor model developed in Hangzhou, China. The model has been validated with the GA08JT17-247 device data representing both static and dynamic characteristics from GeneSiC. Parameter extraction was performed in IC-CAP and results include plots showing output characteristics, capacitance versus voltage (C-V), and switching characteristics for 25 °C, 125 °C, and 175 °C temperatures.
Citation
Brooks, S. E. (2016). Modeling and Simulation of 1700 V 8 A GeneSiC Superjunction Transistor. Graduate Theses and Dissertations Retrieved from https://scholarworks.uark.edu/etd/1740
Included in
Electromagnetics and Photonics Commons, Electronic Devices and Semiconductor Manufacturing Commons
