Date of Graduation

5-2017

Document Type

Dissertation

Degree Name

Doctor of Philosophy in Engineering (PhD)

Degree Level

Graduate

Department

Electrical Engineering

Advisor/Mentor

Mantooth, H. Alan

Committee Member

Di, Jia

Second Committee Member

Ang, Simon S.

Third Committee Member

Vrotsos, Tom A.

Keywords

Applied sciences; PMOS devices; SiC NMOS

Abstract

Silicon Carbide is a promising wide bandgap material and gradually becoming the first choice of semiconductor for high density and high efficiency power electronics in medium voltage range (500-1500V). SiC has also excellent thermal conductivity and the devices fabricated with the material can operate at high temperature (~ 400 ⁰C). Thus, a power electronic system built with SiC devices requires less cooling requirement and saves board space and cost. The high temperature applications of SiC material can also be extended to space exploration, oil and gas rigging, aerospace and geothermal energy systems for data acquisition, sensing and instrumentation and power conditioning and conversion. But the high temperature capability of SiC can only be utilized when the integrated circuits can be designed in SiC technology and high fidelity compact models of the semiconductor devices are a priori for reliable and high yielding integrated circuit design.

The objective of this work is to develop industry standard compact models for SiC NMOS and PMOS devices. A widely used compact model used in silicon industry called BSIM3V3 is adopted as a foundation to build the model for SiC MOSFET. The models optimized with the built-in HSPICE BSIM3V3.3 were used for circuit design in one tape-out but BSIM3V3 was found to be inadequate to model all of the characteristics of SiC MOSFET due to the presence of interface trapped charge. In the second tape-out, the models for SiC NMOS and PMOS were optimized based on the built-in HSPICE BSIM4V6.5 and a number of functioning circuits which have been published in reputed journal and conference were designed based on the models. Although BSIM4 is an enhanced version of BSIM3V3, it also could not model a few deviant SiC MOSFET characteristics such as body effect, soft saturation etc. The new model developed for SiC NMOS and PMOS based on BSIM4V7.0 is called BSIM4SIC and can model the entire range of device characteristics of the devices. The BSIM4SIC models are validated with a wide range of measured data and verified using the models in the simulation of numerous circuits such as op-amp, comparator, linear regulator, reference and ADC/DAC.

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