Date of Graduation
12-2014
Document Type
Thesis
Degree Name
Master of Science in Electrical Engineering (MSEE)
Degree Level
Graduate
Department
Electrical Engineering
Advisor/Mentor
Mantooth, H. Alan
Committee Member
Ang, Simon S.
Second Committee Member
Francis, A. Matthew
Abstract
This thesis presents the design, simulation, layout and test results of a silicon carbide (SiC) CMOS two-stage operational amplifier (op amp) with NMOS input stage. The circuit has been designed to provide a stable open-loop voltage gain (60 dB), unity-gain bandwidth (around 5 MHz) and maintain a high CMRR and PSRR within a useful input common mode range over process corners and a wide temperature range (25 °C - 300 °C). Between the two stages a Miller compensation topology is placed to improve the phase margin (around 45°). Due to the comparatively high threshold voltage values of transistors in SiC, the power supply is maintained at 15 V. There is a maximum of 21% variation in DC gain from 25 °C to 275 °C and the unity-gain bandwidth and slew rate improves with higher temperature. The major application area of this op amp is in high temperature environments where silicon (Si) integrated circuits (IC) fail to perform. In addition, the design of a second version of the operational amplifier is covered, which aims to provide more functionality and improved performance.
Citation
Bhuyan, S. A. (2014). Design of a High Performance Silicon Carbide CMOS Operational Amplifier. Graduate Theses and Dissertations Retrieved from https://scholarworks.uark.edu/etd/2042
Included in
Electronic Devices and Semiconductor Manufacturing Commons, VLSI and Circuits, Embedded and Hardware Systems Commons
