Date of Graduation

5-2014

Document Type

Thesis

Degree Name

Master of Science in Microelectronics-Photonics (MS)

Degree Level

Graduate

Department

Microelectronics-Photonics

Advisor/Mentor

Barraza-Lopez, Salvador

Committee Member

Naseem, Hameed A.

Second Committee Member

Bellaiche, Laurent

Third Committee Member

Vickers, Kenneth G.

Keywords

Electrical Properties; Graphene; Strain Engineering

Abstract

Graphene has a number of fascinating mechanical and electrical properties. Strain engineering in graphene is the attempt to control its properties with mechanical strain. Previous research in this area has come up with an approach using a continuum theory to describe the strain induced gauge fields in graphene; however, this approach is only valid for small strains (5% at most). A discrete framework is being developed in Arkansas that can more accurately calculate the deformation (electrical) and (pseudo-)magnetic gauge fields created by large strains. Computational simulations were carried out and used to get discrete atomic positions for strained, suspended graphene membranes, and those coordinates were then used to accurately and discretely calculate the gauge fields.

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