Date of Graduation

5-2014

Document Type

Dissertation

Degree Name

Doctor of Philosophy in Engineering (PhD)

Degree Level

Graduate

Department

Electrical Engineering

Advisor/Mentor

Ang, Simon S.

Committee Member

Mantooth, H. Alan

Second Committee Member

Balda, Juan C.

Third Committee Member

Zou, Min

Fourth Committee Member

Spiesshoefer, Silke A.

Keywords

Double-sided Cooling; Low-temperature Co-fired Ceramic Substrate; Nano Silver Die Attach; Power Electronic Module; Wire Bondless

Abstract

This objective of this dissertation research is to investigate a module packaging technology for high temperature double-sided cooling power electronic module application. A high-temperature wire-bondless low-temperature co-fired ceramic (LTCC) based double-sided cooling power electronic module was designed, simulated and fabricated. In this module, the conventional copper base plate is removed to reduce the thermal resistance between the device junctions to the heat sink and to improve the reliability of the module by eliminating the large area solder joint between the power substrate and the copper base plate. A low-temperature co-fired ceramic (LTCC) substrate with cavities and vias is used as the dielectric material between the top and bottom substrates and it also serves as the die frame. A nano silver attach material is used to enable the high-temperature operation.

Thermal and thermo-mechanical simulations were performed to evaluate the advantages of the LTCC double-sided power module structure and compared to other reported module structures and its wire-bonded counterpart. The junction-to-case thermal resistance for the power module without a copper base plate is 0.029oC/W, which is smaller than that of the power module with a copper base plate. Thermo-mechanical simulation reveals that double-sided cooling power modules generate higher thermal stresses when compared to that of the single-sided cooling power modules which indicates the trade-off between the junction temperature and the thermo-mechanical stress.

Electrical and thermal characterizations were performed to test the functionality of the fabricated module using a 1200V rated voltage blocking capability. The forward and reverse characteristics of the SiC power MOSFET and SiC diode module were tested to 200°C and they demonstrated the functionality of the power module. The junction-to-ambient thermal resistance of the proposed module is shown to reduce by 11% compared to the wire-bonded equivalent which shows an improvement of the thermal performance of the double-sided cooling structure. Finally, the reliability of the several power substrates was evaluated based on the thermal stress and fatigue life simulation of the bonding layer to determine the mechanical weakest spots of the power module. Thermal cycling experiments were also conducted to validate the simulation results.

Download

Share

COinS