Date of Graduation
12-2018
Document Type
Thesis
Degree Name
Master of Science in Electrical Engineering (MSEE)
Degree Level
Graduate
Department
Electrical Engineering
Advisor/Mentor
Mantooth, H. Alan
Committee Member
Di, Jia
Second Committee Member
Francis, A. Matthew
Keywords
High Temperature Electronics; RS-485; Silicon Carbide; Transceiver; Wide Bandgap ICs
Abstract
This thesis presents the design, simulation and test results of a silicon carbide (SiC) RS-485 transceiver for high temperature applications. This circuit is a building block in the design and fabrication of a digital data processing and control system. Automation processes for extreme environments, remote connection to high temperature locations, deep earth drilling, and high temperature data acquisition are some of the potential applications for such a system. The transceiver was designed and developed in a 1.2 µm SiC-CMOS process by Raytheon Systems, Ltd. (UK). It has been tested with a supply voltage of 12 V and 15 V, temperatures from 25°C to 400°C, half-duplex and full-duplex configurations, and with 2400 ft of category 5e (cat5e) cable. At 400°C, the rise and fall times are 32 ns and 24 ns respectively. The transceiver has been tested with a silicon RS-485 transceiver over temperature in order to characterize the device performance when acquiring data from a hot environment and transmitting it to a cooler environment and vice versa. Finally, high temperature performance over time is demonstrated over 150 hours at 300°C.
Citation
Benavides Herrera, M. R. (2018). An RS-485 Transceiver in a Silicon Carbide CMOS Process. Graduate Theses and Dissertations Retrieved from https://scholarworks.uark.edu/etd/3067
