Date of Graduation
12-2018
Document Type
Thesis
Degree Name
Master of Science in Electrical Engineering (MSEE)
Degree Level
Graduate
Department
Electrical Engineering
Advisor/Mentor
Mantooth, H. Alan
Committee Member
Zhao, Yue
Second Committee Member
Luo, Fang
Keywords
Converters; BESS; power loss; efficiency; Saber; inverters
Abstract
This thesis compares the performance of a nine-level transformerless cascaded H-bridge (CHB) inverter with integrated battery energy storage system (BESS) using SiC power MOSFETs and Si IGBTs. Two crucial performance drivers for inverter applications are power loss and efficiency. Both of these are investigated in this thesis. Power devices with similar voltage and current ratings are used in the same inverter topology, and the performance of each device is analyzed with respect to switching frequency and operating temperature. The loss measurements and characteristics within the inverter are discussed. The Saber® simulation software was used for the comparisons. The power MOSFET and IGBT modeling tools in Saber® were extensively utilized to create the models of the power devices used in the simulations. The inverter system is also analyzed using Saber-Simulink cosimulation method to feed control signals from Simulink into Saber. The results in this investigation show better performances using a SiC MOSFET-based grid-connected BESS inverter with a better return of investment.
Citation
Mordi, K. (2018). Comparative Study of Power Semiconductor Devices in a Multilevel Cascaded H-Bridge Inverter. Graduate Theses and Dissertations Retrieved from https://scholarworks.uark.edu/etd/3118
Included in
Electro-Mechanical Systems Commons, Electronic Devices and Semiconductor Manufacturing Commons, Engineering Mechanics Commons, Mechanics of Materials Commons, Power and Energy Commons, Semiconductor and Optical Materials Commons