Date of Graduation
8-2012
Document Type
Dissertation
Degree Name
Doctor of Philosophy in Engineering (PhD)
Degree Level
Graduate
Department
Electrical Engineering
Advisor/Mentor
Mantooth, H. Alan
Committee Member
Brown, Randy L.
Second Committee Member
Balda, Juan C.
Third Committee Member
Smith, Scott C.
Fourth Committee Member
Di, Jia
Keywords
Applied sciences; High temperature electronics; Ic design; Silicon carbide; Voltage regulators; Wide bandgap semiconductors
Abstract
Current market demands have pushed the capabilities of silicon to the edge. High temperature and high power applications require a semiconductor device to operate reliably in very harsh environments. This situation has awakened interests in other types of semiconductors, usually with a higher bandgap than silicon's, as the next venue for the fabrication of integrated circuits (IC) and power devices. Silicon Carbide (SiC) has so far proven to be one of the best options in the power devices field.
This dissertation presents the first attempt to fabricate a SiC linear voltage regulator. This circuit would provide a power management option for developing SiC processes due to its relatively simple implementation and yet, a performance acceptable to today's systems applications. This document details the challenges faced and methods needed to design and fabricate the circuit as well as measured data corroborating design simulation results.
Citation
Valle Mayorga, J. A. (2012). A Silicon Carbide Linear Voltage Regulator for High Temperature Applications. Graduate Theses and Dissertations Retrieved from https://scholarworks.uark.edu/etd/473
Included in
Electronic Devices and Semiconductor Manufacturing Commons, Semiconductor and Optical Materials Commons
