Date of Graduation
12-2022
Document Type
Dissertation
Degree Name
Doctor of Philosophy in Engineering (PhD)
Degree Level
Graduate
Department
Electrical Engineering
Advisor/Mentor
Mantooth, H. Alan
Committee Member
Chen, Zhong
Second Committee Member
Peng, Yarui
Third Committee Member
Ware, Morgan E.
Keywords
Compact Modeling; Cryogenic; Gallium Nitride; HEMT; Power Electronics; Semiconductor
Abstract
Since power converters shape a wide range of power electronic applications, the 'heart' of these conversions, such as solid-state switches, is crucial for achieving higher power density, lower loss, and higher efficiency operations. Although the limitations imposed by silicon-based power devices have been reduced by introducing novel devices such as IGBTs and super junction MOSFETs to allow for broader applications, solutions beyond silicon have presented a continuous challenge to the device engineers. Driving these converters at a higher switching frequency allows for higher power density. However, to support a higher frequency and operating temperature, superior materials, e.g., wide bandgap materials, are also needed. Two such materials, namely silicon carbide (SiC) and gallium nitride (GaN), thanks to their excellent material properties like higher mobility, higher breakdown electric field, and lower leakage, are paving the way to improved efficiency and high power density with broader functionality. Although SiC plays a vital role in a wider range of power electronics applications, the use of SiC outside of standard operation regions, e.g., cryogenic temperature (
Citation
Hossain, M. (2022). Improved Compact Modeling of High Voltage Gallium Nitride High Electron Mobility Transistors. Graduate Theses and Dissertations Retrieved from https://scholarworks.uark.edu/etd/4743
