Date of Graduation

8-2025

Document Type

Thesis

Degree Name

Master of Science in Physics (MS)

Degree Level

Graduate

Department

Physics

Advisor/Mentor

Churchill, Hugh

Committee Member

Nakamura, Hiro

Second Committee Member

Hu, Jin

Keywords

Direct Band Gap; Optoelectronics; Quantum Emitter; Single Photon Emission; Strain engineering; WSe2

Abstract

Strain induced defects in monolayer tungsten diselenide (WSe₂) give rise to localized exciton funnels, offering a promising approach for the development of tunable quantum emitters. The quantum devices fabricated for this thesis used a modified dimple dot geometry, in which nano indentation creates a strain profile on the monolayer WSe₂. This allows for the funneling of excitons to a confined region. These strain induced funnels enable localized emission from single excitons in WSe₂. Device fabrication was carried out through mechanical exfoliation, dry transfer, and electron beam lithography of Cr/Au gates on a SiO₂ substrate. These devices were then characterized using atomic force microscopy (AFM), photoluminescence (PL) spectroscopy, and Stark shift measurements under applied gate voltages. Optical spectroscopy at room temperature revealed localized emission features and early indications of electric gate tunability. Dimple dot devices in WSe₂ represent a promising platform for the deterministic placement and control of quantum emitters for integrated quantum photonics applications.

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