Document Type
Patent
Publication Date
11-23-1993
Abstract
A thin film layer of silicon nitride is deposited on silicon substrate by plasma enhanced chemical vapor deposition techniques is stabilized by post-deposition rapid thermal annealing at temperatures ranging from about 600° C to about 700° C and at times ranging from about 3 seconds to about 30 seconds is described.
Department
Electrical Engineering
Patent Number
US5264724
Application Filed
5-29-1990
Assignee
University of Arkansas (Little Rock, AR)
Citation
Brown, W. D., & Khaliq, M. A. (1993). Silicon nitride for application as the gate dielectric in MOS devices. Patents Granted. Retrieved from https://scholarworks.uark.edu/pat/230
COinS
Comments
William D. Brown, Department of Electrical Engineering, University of Arkansas, Fayetteville, AR