Silicon nitride for application as the gate dielectric in MOS devices

Inventors

William D. Brown, University of Arkansas, FayettevilleFollow
Muhammad A. KhaliqFollow

Document Type

Patent

Publication Date

11-23-1993

Abstract

A thin film layer of silicon nitride is deposited on silicon substrate by plasma enhanced chemical vapor deposition techniques is stabilized by post-deposition rapid thermal annealing at temperatures ranging from about 600° C to about 700° C and at times ranging from about 3 seconds to about 30 seconds is described.

Department

Electrical Engineering

Patent Number

US5264724

Application Filed

5-29-1990

Assignee

University of Arkansas (Little Rock, AR)

Comments

William D. Brown, Department of Electrical Engineering, University of Arkansas, Fayetteville, AR

Citation

Brown, W. D., & Khaliq, M. A. (1993). Silicon nitride for application as the gate dielectric in MOS devices. Patents Granted. Retrieved from https://scholarworks.uark.edu/pat/230