Method for modeling and parameter extraction of LDMOS devices

Inventors

Avinash S. KashyapFollow
H. Alan Mantooth, University of Arkansas, FayettevilleFollow

Document Type

Patent

Publication Date

12-17-2013

Abstract

A method for modeling the performance of a laterally diffused metal oxide semiconductor (LDMOS) device across a wide temperature range is disclosed. The method comprises the steps of positioning the device in an environment chamber operable to create a plurality of environment temperatures; connecting the pins of the device to a measurement system operable to measure at least one device characteristic; operating the environment chamber to set a series of four environment temperatures, acquiring a value of the device characteristic from the measurement system at each temperature, and extracting a temperature parameter set based on the value of the device characteristic at each temperature, then generating a temperature-scaling model for the device.

Department

Electrical Engineering

Patent Number

US8608376

Application Number

US20110292964

Application Published

12-1-2011

Application Filed

5-26-2011

Assignee

Board of Trustees of the University of Arkansas (Little Rock, AR)

Comments

H. Alan Mantooth, Department of Electrical Engineering, University of Arkansas, Fayetteville, AR

Citation

Kashyap, A. S., & Mantooth, H. A. (2013). Method for modeling and parameter extraction of LDMOS devices. Patents Granted. Retrieved from https://scholarworks.uark.edu/pat/29