Title

Doped semiconductor nanocrystals and methods of making same

Document Type

Patent

Publication Date

12-29-2010

Abstract

A method of synthesizing doped semiconductor nanocrystals. In one embodiment, the method includes the steps of combining a metal oxide or metal salt precursor, a ligand, and a solvent to form a metal complex in a reaction vessel; admixing an anionic precursor with the metal complex at a first temperature, T1, sufficient to form a plurality of host nanocrystals; doping a metal dopant onto the plurality of the host nanocrystals at a second temperature, T2, such that a layer of the metal dopant is formed substantially over the surface of a host nanocrystal that receives a metal dopant;; and adding a mixture having the anionic precursor and the metal oxide or metal salt precursor at a third temperature, T3, into the reaction vessel to allow regrowth of host nanocrystals on the surface of the layer of the metal dopant formed substantially over the surface of a host nanocrystal that receives a metal dopant to form a plurality of doped nanocrystals, wherein the doped nanocrystals show a characteristic of semiconductor.

Department

Chemistry & Biochemistry

Patent Number

GB2441666 (B)

Application Published

11-2-2006

Application Filed

4-25-2006

Assignee

Board of Trustees of the University of Arkansas (Little Rock, AR)

Comments

Narayan Pradhan, Department of Chemistry and Biochemistry

Xiaogang Peng, Department of Chemistry and Biochemistry

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